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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220 package Complement to PNP type : 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6124 2N6125 2N6126 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage CHA 2N6124 2N6125 Open emitter VCEO Collector-emitter voltage VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature IN NG S 2N6124 2N6125 2N6126 2N6126 Open base CON EMI TOR DUC VALUE -45 -60 -80 -45 -60 -80 -5 -4 -8 -1 UNIT V V Open collector V A A A W ae ae TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6124 VCEO(SUS) Collector-emitter sustaining voltage 2N6125 2N6126 VCEsat-1 VCEsat-2 VBE(on) Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N6124 ICEX Collector cut-off current 2N6125 2N6126 2N6124 2N6125 IC=-1.5A;IB=-0.15A IC=-4.0A;IB=-1.0A IC=-1.5A ; VCE=-2V VCE=-45V;VBE=1.5V TC=125ae VCE=-60V;VBE=1.5V TC=125ae VCE=-80V;VBE=1.5V TC=125ae VCE=-45V;IB=0 VCE=-60V;IB=0 VCE=-80V;IB=0 VEB=-5V; IC=0 IC=-0.1A ;IB=0 CONDITIONS MIN -45 -60 -80 -0.6 -1.4 -1.2 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 V V V V TYP. MAX UNIT SYMBOL mA ICEO Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain CHA IN NG S 2N6124 2N6125 2N6126 2N6124 2N6126 CON EMI TOR DUC -1.0 -1.0 25 100 mA mA IC=-1.5A ; VCE=-2V 20 80 10 hFE-2 DC current gain 2N6125 2N6126 fT Transition frequency IC=-1A ; VCE=-4V IC=-4A ; VCE=-2V 7 2.5 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6124 2N6125 2N6126 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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